markin g diagram s noninverting 3?state buffe r the internal circuit is composed of three stages, including a buffered 3-state output which provides high noise immunity and stable output. the L74VHC1G125 input structure provides protection when voltages up to 7.0v are applied,regardless of the supply voltage. this allows the L74VHC1G125 to be used to interface 5.0v circuits to 3.0v circuits. m 5 w0 m feature s ? high speed: t pd = 3.5 ns (typ) at v cc = 5.0 v 1 ? low power dissipation: i cc = 1 a (max) at t a = 25 c ? power down protection provided on input s 5 ? balanced propagation delay s w0 ayw ? pin and function compatible with other standard logic familie s ? chip complexity: fets = 58; equivalen t gates = 1 5 1 ? pb?free packages are availabl e 1 o e 5 v c c in a 2 gn d 3 4 out y pin assignmen t 1 o e 2 in a 3 gn d 4 out y 5 v c c figure 1. pinout (top view ) en out y function tabl e in a a inpu t oe inpu t y outpu t l l h l h x h z o e figure 2. logic symbo l ordering informatio n see detailed ordering and shipping information in the packag e dimension s section on page 5 of this data sheet . l noninverting 3 state buffer fabricated with silicon gate cmos technology. it achieves high speed operation similar to equivalent bipolar schottky ttl while maintaining cmos low power dissipation. leshan radio company, ltd. the L74VHC1G125 is an advanced high speed cmos noninverting 3 state buffer fabricated with silicon gate l7 4 vhc1g125 1 3 2 4 5 tsop?5/sot?23/sc?59 dt suffix sc?88a/sot?353/sc?70 df suffix 1 3 2 4 5 1/6
L74VHC1G125 maximum rating s symbo l characteristic s valu e uni t v c c dc supply voltag e ?0.5 to +7. 0 v v i n dc input voltag e ?0.5 to +7. 0 v v ou t dc output voltag e v cc = 0 high or low stat e ?0.5 to 7. 0 ?0.5 to v cc + 0. 5 v i i k input diode curren t ?2 0 m a i o k output diode curren t v out < gnd; v out > v c c +2 0 m a i ou t dc output current, per pi n +2 5 m a i c c dc supply current, v cc and gn d +5 0 m a p d power dissipation in still ai r sc?88a, tsop? 5 20 0 m w j a thermal resistanc e sc?88a , tsop? 5 33 3 c/ w t l lead temperature, 1 mm from case for 10 s 26 0 c t j junction temperature under bia s +15 0 c t st g storage temperatur e ?65 to +15 0 c v es d esd withstand voltag e human body model (note 1 ) machine model (note 2 ) charged device model (note 3 ) > 200 0 > 20 0 n/ a v i latchu p latchup performanc e above v cc and below gnd at 125 c (note 4 ) 50 0 m a maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limi t value s (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied , damage may occur and reliability may be affected . 1 . tested to eia/jesd22?a114?a . 2 . tested to eia/jesd22?a115?a . 3 . tested to jesd22?c101?a . 4 . tested to eia/jesd78 . recommended operating condition s symbo l characteristic s mi n ma x uni t v c c dc supply voltag e 2. 0 5. 5 v v i n dc input voltag e 0. 0 5. 5 v v ou t dc output voltag e 0. 0 v c c v t a operating temperature rang e ?5 5 +12 5 c t r , t f input rise and fall tim e v cc = 3.3 v 0.3 v 0 10 0 ns/ v v cc = 5.0 v 0.5 v 0 2 0 device junction temperature versu s time to 0.1% bond failure s junctio n temperatur e c time, hour s time, year s 8 0 1,032,20 0 117. 8 9 0 419,30 0 47. 9 10 0 178,70 0 20. 4 11 0 79,60 0 9. 4 12 0 37,00 0 4. 2 13 0 17,80 0 2. 0 14 0 8,90 0 1. 0 1 t j = 80 c t j = 90 c t j = 100 c t j c t j = 130 c t j normalized failure rate = 110 = 120 c failure rate of plastic = ceramic until intermetallics occur 1 1 0 10 0 100 0 time, year s figure 3. failure rate vs. tim e junction temperatur e leshan radio comp any , ltd. 2/6
????????????????????????????????? ???? ??????? ???????? ??????? ????? ?????? ?? ??? ??? ??? ??? ??? ??? ???? ???? ??????? ???????? ??? ??? ??? ??? ??? ??? ???? ?? ???????? ??? ??? ??? ??? ??? ??? ???? ???? ??????? ???????? ??? ??? ??? ??? ??? ??? ???? ?? ???????? ??? ??? ??? ??? ??? ??? ???? ???? ??????? ???????? ??? ??? ??? ??? ??? ??? ???? ?? ???????? ??? ??? ??? ??? ??? ??? ???? ???? ??????? ???????? ??? ??? ??? ??? ??? ??? ???? ?? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? L74VHC1G125 dc electrical characteristic s symbo l paramete r test condition s v c c (v ) t a = 25 c t a 85 c ?55 t a 125 c uni t mi n ty p ma x mi n ma x mi n ma x v i h minimum high?level input voltag e 2. 0 3. 0 1. 5 2. 1 1. 5 2. 1 1. 5 2. 1 v 4. 5 3.1 5 3.1 5 3.1 5 5. 5 3.8 5 3.8 5 3.8 5 v i l maximum low?level input voltag e 2. 0 3. 0 0. 5 0. 9 0. 5 0. 9 0. 5 0. 9 v 4. 5 1.3 5 1.3 5 1.3 5 5. 5 1.6 5 1.6 5 1.6 5 v o h minimum high?level v in = v ih or v i l 2. 0 1. 9 2. 0 1. 9 1. 9 v output voltag e i oh = ?50 a 3. 0 2. 9 3. 0 2. 9 2. 9 v in = v ih or v i l 4. 5 4. 4 4. 5 4. 4 4. 4 v in = v ih or v i l v i oh = ?4 m a 3. 0 2.5 8 2.4 8 2.3 4 i oh = ?8 m a 4. 5 3.9 4 3.8 0 3.6 6 v o l maximum low?level v in = v ih or v i l 2. 0 0. 0 0. 1 0. 1 0. 1 v output voltag e i ol = 50 a 3. 0 0. 0 0. 1 0. 1 0. 1 v in = v ih or v i l 4. 5 0. 0 0. 1 0. 1 0. 1 v in = v ih or v i l v i ol = 4 m a 3. 0 0.3 6 0.4 4 0.5 2 i ol = 8 m a 4. 5 0.3 6 0.4 4 0.5 2 i o z maximum 3?stat e leakage curren t v in = v ih or v i l v out = v cc or gn d 5. 5 0.2 5 2. 5 2. 5 a i i n maximum inpu t leakage curren t v in = 5.5 v or gn d 0 t o 5. 5 0. 1 1. 0 1. 0 a i c c maximum quiescen t supply curren t v in = v cc or gn d 5. 5 1. 0 2 0 4 0 a ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 n s ???????????????????????????????? ? ??? ? symbo l ??? ? ?????? ? paramete r ?????? ? ??????? ? test condition s ?????? ? t a = 25 c ???? ? t a 85 c ????? ? ?55 t a 125 c ? ? uni t ? ? mi n ?? ? ty p ?? ? ma x ?? ? mi n ?? ? ma x ?? ? mi n ?? ? ma x ??? ? t plh , t phl ? ?? ? ? ?? ? ? ?? ? ? ????? ? ? ????? ? ? ????? ? maximum propagatio n delay , input a to y (figures 3 and 4 ) ? ?????? ? v cc = 3.3 0.3 v c l = 15 p f c l = 50 p f ??????? ? ? ? ? ? 4. 5 6.4 ? ? ? 8. 0 11. 5 ? ? ? ? ? ? 9. 5 13.0 ? ? ? ? ? ? ?? 12. 0 16. 0 ? ? ? ? ? ? ? n s ??????? ? ? ?????? ? v cc = 5.0 0.5 v c l = 15 p f c l = 50 p f ?? ? ? ? ? ?? ? ? 3. 5 4. 5 ? ? ?? ? ? 5. 5 7. 5 ? ? ?? ? ? ? ? ?? ? ? 6. 5 8. 5 ? ? ?? ? ? ? ? ??? ? ? ?? 8. 5 10. 5 ? ??? ? t pzl , t pz h ? ?? ? ? ?? ? ?????? ? ? ????? ? ? ????? ? maximum outpu t enable time, input oe to y (figures 4 and 5 ) ??????? ? v cc = 3.3 0.3 v c l = 15 p f r l = 1000 c l = 50 p f ??? ?? ? 4. 5 6. 4 ?? ? 8. 0 11. 5 ??? ?? ? 9. 5 13. 0 ??? ??? ? 11. 5 15. 0 ? ? ? ? ? ? n s ??????? ? ? ?????? ? v cc = 5.0 0.5 v c l = 15 p f r l = 1000 c l = 50 p f ?? ? ? ? ? ?? ? ? 3. 5 4.5 ? ? ?? ? ? 5. 1 7.1 ? ? ?? ? ? ? ? ?? ? ? 6. 0 8.0 ? ? ?? ? ? ? ? ??? ? ? ?? 8. 5 10. 5 ? ???? t plz , t ph z ? ?? ? ? ?? ? ?????? ? ? ????? ? ? ????? ? maximum outpu t disable time, input oe to y (figures 4 and 5 ) ??????? ? ? ?????? ? v cc = 3.3 0.3 v c l = 15 p f r l 1000 c l = 50 p f ?? ? ? ? ? ?? ? ? 6. 5 8. 0 ? ? ?? ? ? 9. 7 13. 2 ? ? ?? ? ? ? ? ?? ? ? 11. 5 15. 0 ? ? ?? ? ? ? ? ??? ? ? ?? 14. 5 18. 0 ? ? ? ? ? ? ? n s ??????? ? v cc = 5.0 0.5 v c l = 15 p f r l = 1000 c l = 50 p f ??? ?? ? 4. 8 7. 0 ?? ? 6. 8 8. 8 ??? ?? ? 8. 0 10. 0 ??? ??? ? 10. 0 12. 0 ???? c i n ? ?? ? ?????? ? ? ????? ? maximum inpu t capacitanc e ??????? ? ? ?????? ? ?? ? ? ? ? ?? ? ? 4. 0 ? ? ?? ? ? 1 0 ? ? ?? ? ? ? ? ?? ? ? 1 0 ? ? ?? ? ? ? ? ??? ? ? ?? 1 0 ? ? ? ? ? p f ??? ? c ou t ? ?? ? ?????? ? ? ????? ? maximum 3?state out- put capacitanc e (outpu t in hig h impedanc e state ) ??????? ? ? ?????? ? ?? ? ? ? ? ?? ? ? 6. 0 ? ? ?? ? ? ? ? ?? ? ? ? ? ?? ? ? ? ? ?? ? ? ? ? ??? ? ? ?? ? ? ? ? ? p f ?? ????? ?????? ? ? ? ? ? ? ? ? c p d power dissipation capacitance (note 5 ) typical @ 25 c, v cc = 5.0 v pf 8. 0 5 . c pd is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load . average operating current can be obtained by the equation: i cc(opr ) = c p d v c c f in + i cc . c pd is used to determine the no?load dynami c power consumption; p d = c p d v cc 2 f in + i c c v cc . leshan radio comp any , ltd. 3/6
L74VHC1G125 switching waveforms figure 4. switching wave forms figure 5. y 50% 50% v cc 50% v cc v cc gnd high impedance v ol + 0.3v v oh ? 0.3v y y oe t pzl t plz t pzh t phz *includes all probe and jig capacitance c l * test point device under test output figure 6. test circuit *includes all probe and jig capacitance figure 7. test circuit output test point c l * 1 k connect to v cc when testing t plz and t pzl. connect to gnd when testing t phz and t pzh. device under test high impedance 50% 50% v cc v cc gnd t plh t phl a figure 8. input equivalent circuit input device ordering information leshan radio comp any , ltd. device nomenclature l 74vhc1g125dft1 l 74 vhc1g 125 df t 1 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g125dft2 l 74 vhc1g 125 2 df t 2 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g125dft4 l 74 vhc1g 125 2 df t 4 s c?70/sc?88a/ 3 30 mm (13 in) sot?353 10,000 unit l 74vhc1g125dtt1 l 74 vhc1g 125 2 dt t 1 s ot?23/tsops/ 1 78 mm (7 in) sc?59 3000 unit l 74vhc1g125dtt3 l 74 vhc1g 125 2 dt t 3 s ot?23/tsops/ 3 30 mm (13 in) sc?59 10,000 unit device order number circuit indicator temp range identifier technology device function package suffix tape & reel suffix package type (name/sot#/ common name) tape and reel size 4/6
L74VHC1G125 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h ??? 0.10 ??? 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc?88a / sot?353 / sc70 mm inches scale 20:1 soldering footprint* 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 leshan radio comp any , ltd. 5/6
L74VHC1G125 6 package dimensions tsop?5 / sot23?5 / sc59?5 dt suffix soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. a and b dimensions do not include mold flash, protrusions, or gate burrs. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 leshan radio comp any , ltd. 6/6
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